BSO080P03SHXUMA1P-Channel 30 V 12.6A (Ta) 1.79W (Ta) Surface Mount PG-DSO-8
1:$1.4200
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ABRmicro #.ABR2045-BSO080-991240
ManufacturerInfineon Technologies
MPN #.BSO080P03SHXUMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSO080P03S H(PDF)
BSO080P03S H(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4200
Ext. Price$ 1.4200
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4200$1.4200
10$1.1800$11.8040
100$0.9400$94.0310
500$0.7950$397.3750
1000$0.6740$673.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSO080
Continuous Drain Current (ID) @ 25°C12.6A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)136 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5890 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation1.79W (Ta)
RDS(on) Drain-to-Source On Resistance8mOhm @ 14.9A, 10V
Package Type (Mfr.)PG-DSO-8
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±25V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part BSO080P03SHXUMA1 from Infineon Technologies is a P-Channel MOSFET characterized by its 30V voltage rating and 12.6A current capacity when considering the thermal limits. This MOSFET is presented in a surface-mount PG-DSO-8 package, making it suitable for high-density PCB designs. It boasts a power dissipation capacity of 1.79W. The gate threshold voltage is specified at 2.2V with a test current of 250μA, and it exhibits a considerable gate charge of 136 nC at 10V, which suggests its capability in switching applications requiring moderate speed and efficiency.
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