BSD316SNH6327XTSA1N-Channel 30 V 1.4A (Ta) 500mW (Ta) Surface Mount PG-SOT363-PO
1:$0.3330
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ABRmicro #.ABR2045-BSD316-1003857
ManufacturerInfineon Technologies
MPN #.BSD316SNH6327XTSA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSD316SN(PDF)
BSD316SN(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.3330
Ext. Price$ 0.3330
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.3330$0.3330
10$0.2380$2.3800
100$0.1200$12.0060
500$0.1060$53.1250
1000$0.0830$82.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSD316
Continuous Drain Current (ID) @ 25°C1.4A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)0.6 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)94 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation500mW (Ta)
RDS(on) Drain-to-Source On Resistance160mOhm @ 1.4A, 10V
Package Type (Mfr.)PG-SOT363-PO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 3.7µA
Package / Case6-VSSOP, SC-88, SOT-363
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Datasheets
Environmental Information
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The part number BSD316SNH6327XTSA1, manufactured by Infineon Technologies, is an N-Channel MOSFET designed for efficient operation in electronic circuits. It can handle a maximum drain-source voltage of 30 V and a continuous current of 1.4A at room temperature. The component delivers a dissipation power of 500mW and is housed in a compact PG-SOT363 surface-mount package. It features a gate-source voltage rating of ±20V, with a threshold voltage of 2V achieved at 3.7µA gate current. The input capacitance is measured at 94 pF with a drain-source voltage of 15 V, indicating its suitability for various switching applications.
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