BSC882N03MSGATMA1N-Channel 34 V 22A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
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ABRmicro #.ABR2045-BSC882-949487
ManufacturerInfineon Technologies
MPN #.BSC882N03MSGATMA1
Estimated Lead Time-
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Datasheet
BSC882N03MS G(PDF)
BSC882N03MS G(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C22A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)34 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4300 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 69W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 30A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC882N03MSGATMA1 by Infineon Technologies is an N-Channel MOSFET designed for efficient power management in electronic circuits. It handles a maximum voltage of 34V and can carry a current up to 22A when used in open air (Ta) and 100A when a heat sink is present (Tc). This MOSFET is capable of dissipating 2.5W of power in free air and up to 69W with proper cooling. Housed in a compact PG-TDSON-8-1 surface mount package, it offers a low on-state resistance of 2.6mOhms at 30A and 10V, alongside a total gate charge of 55nC at 10V, making it suitable for applications requiring precise and reliable switching.
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