BSC500N20NS3GATMA1N-Channel 200 V 24A (Tc) 96W (Tc) Surface Mount PG-TDSON-8-1
1:$1.7010
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC500-944784
ManufacturerInfineon Technologies
MPN #.BSC500N20NS3GATMA1
Estimated Lead Time18 Weeks
SampleGet Free Sample
Datasheet
BSC500N20NS3 G(PDF)
BSC500N20NS3 G(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.7010
Ext. Price$ 1.7010
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.7010$1.7010
10$1.4130$14.1310
100$1.1250$112.5190
500$0.9510$475.4690
1000$0.8060$806.4380
2000$0.7670$1534.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC500
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1580 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation96W (Tc)
RDS(on) Drain-to-Source On Resistance50mOhm @ 22A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 60µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC500N20NS3GATMA1 is a surface-mount N-channel MOSFET manufactured by Infineon Technologies. It is rated for a maximum voltage of 200 V and a continuous current of 24 A at a case temperature (Tc), with a power dissipation capability of 96 W (Tc). Packaged in a PG-TDSON-8-1 format, this MOSFET features a gate charge of 1580 pF at 100 V and operates with a threshold voltage of 10 V, making it suitable for high-efficiency switching applications in compact electronic designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.