BSC320N20NS3GATMA1N-Channel 200 V 36A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1
1:$2.5810
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC320-968120
ManufacturerInfineon Technologies
MPN #.BSC320N20NS3GATMA1
Estimated Lead Time18 Weeks
SampleGet Free Sample
Datasheet
BSC320N20NS3 G(PDF)
BSC320N20NS3 G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.5810
Ext. Price$ 2.5810
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5810$2.5810
10$2.1640$21.6430
100$1.7510$175.1000
500$1.5570$778.2810
1000$1.3320$1332.3750
2000$1.2550$2509.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC320
Continuous Drain Current (ID) @ 25°C36A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2350 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance32mOhm @ 36A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 90µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC320N20NS3GATMA1 is a power MOSFET developed by Infineon Technologies. It features an N-Channel configuration with a voltage rating of 200 V and a continuous drain current capability of 36A when considering its case temperature (Tc). The component is capable of dissipating up to 125W of power, also when referenced to its case temperature. It is housed in a PG-TDSON-8-1 surface mount package. With a total gate charge of 29 nC at 10 V, this MOSFET is suitable for switching applications. The design emphasizes efficiency in power conversion and management, characteristic of MOSFET technology.
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