BSC190N12NS3GATMA1N-Channel 120 V 8.6A (Ta), 44A (Tc) 69W (Tc) Surface Mount PG-TDSON-8-1
1:$1.1790
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC190-944599
ManufacturerInfineon Technologies
MPN #.BSC190N12NS3GATMA1
Estimated Lead Time18 Weeks
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Datasheet
BSC190N12NS3 G(PDF)
BSC190N12NS3 G(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1790
Ext. Price$ 1.1790
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1790$1.1790
10$0.9690$9.6900
100$0.7530$75.3310
500$0.6390$319.2810
1000$0.5200$519.5630
2000$0.4890$977.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC190
Continuous Drain Current (ID) @ 25°C8.6A (Ta), 44A (Tc)
Drain-to-Source Voltage (VDS)120 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2300 pF @ 60 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation69W (Tc)
RDS(on) Drain-to-Source On Resistance19mOhm @ 39A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 42µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC190N12NS3GATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management applications. This surface-mount device comes in a PG-TDSON-8-1 package and is capable of handling a maximum of 120 V. It delivers a continuous current of 8.6A at ambient temperature and up to 44A when properly heat-sinked at case temperature, with a power dissipation capability of 69W under such conditions. The MOSFET has a gate threshold voltage of 4V at a gate current of 42μA and exhibits an on-state resistance of 19mOhm when driven with a gate-source voltage of 10V, supporting a drain current of 39A. Its compact design and electrical characteristics make it a suitable choice for various high-efficiency power conversion tasks.
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