BSC160N15NS5ATMA1N-Channel 150 V 56A (Tc) 96W (Tc) Surface Mount PG-TDSON-8-7
1:$2.0420
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC160-949133
ManufacturerInfineon Technologies
MPN #.BSC160N15NS5ATMA1
Estimated Lead Time26 Weeks
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Datasheet
BSC160N15NS5A(PDF)
BSC160N15NS5A(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0420
Ext. Price$ 2.0420
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0420$2.0420
10$1.6980$16.9790
100$1.3500$135.0440
500$1.1430$571.6250
1000$0.9700$970.0630
2000$0.9210$1842.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC160
Continuous Drain Current (ID) @ 25°C56A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1820 pF @ 75 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation96W (Tc)
RDS(on) Drain-to-Source On Resistance16mOhm @ 28A, 10V
Package Type (Mfr.)PG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.6V @ 60µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC160N15NS5ATMA1 is a robust N-Channel MOSFET from Infineon Technologies, designed for efficient power management with a maximum voltage rating of 150 V and current carrying capability of 56A under certain conditions (Tc). It supports a power dissipation of up to 96W (Tc) and is packaged in a space-saving PG-TDSON-8-7 surface mount format. This MOSFET features a low on-state resistance of 16mOhm at 28A and 10V, enabling reduced power loss during operation. Additional specifications include a gate charge of 23.1 nC at 10 V and an input capacitance of 1820 pF at 75 V, highlighting its suitability for high-speed switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.