BSC110N15NS5ATMA1N-Channel 150 V 76A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-7
1:$2.4360
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ABRmicro #.ABR2045-BSC110-1014805
ManufacturerInfineon Technologies
MPN #.BSC110N15NS5ATMA1
Estimated Lead Time26 Weeks
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Datasheet
BSC110N15NS5A(PDF)
BSC110N15NS5A(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.4360
Ext. Price$ 2.4360
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4360$2.4360
10$2.0460$20.4640
100$1.6550$165.5380
500$1.4720$735.7810
1000$1.2600$1260.1250
2000$1.1860$2371.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC110
Continuous Drain Current (ID) @ 25°C76A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))8V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)35 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2770 pF @ 75 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 38A, 10V
Package Type (Mfr.)PG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.6V @ 91µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC110N15NS5ATMA1 is a surface mount N-Channel MOSFET produced by Infineon Technologies, designed for efficient power management. It operates at a voltage of 150 V and can handle a continuous current of up to 76A when properly cooled, with a power dissipation capacity of 125W. The transistor is housed in a PG-TDSON-8-7 package, which allows for compact integration in electronic circuits. Its threshold voltage is characterized by a gate-source rating of ±20V and requires a gate voltage of 4.6V for a specified drain current at 91µA, with typical gate voltages of 8V and 10V used for enhanced performance.
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