BSC100N06LS3GATMA1N-Channel 60 V 12A (Ta), 50A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount PG-TDSON-8-5
1:$0.9560
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC100-1001366
ManufacturerInfineon Technologies
MPN #.BSC100N06LS3GATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSC100N06LS3 G(PDF)
BSC100N06LS3 G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.9560
Ext. Price$ 0.9560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9560$0.9560
10$0.7830$7.8310
100$0.6090$60.8810
500$0.5160$258.1880
1000$0.4200$419.6880
2000$0.3960$792.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC100
Continuous Drain Current (ID) @ 25°C12A (Ta), 50A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)45 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3500 pF @ 30 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 50W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-5
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 23µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC100N06LS3GATMA1 is an N-channel MOSFET manufactured by Infineon Technologies designed for efficient power management. It supports a maximum voltage of 60V, with a current capacity of 12A under ambient temperature conditions and up to 50A with adequate thermal control. The component is capable of dissipating 2.5W in standard environments, scalable to 50W with optimal heatsinking, and features a surface-mount PG-TDSON-8-5 package for streamlined integration. Exhibiting a capacitance of 3500 pF at 30 V and a threshold voltage of 2.2V with a drain current of 23µA, this MOSFET offers reliable performance in various electronic circuits.
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