BSC100N03MSGATMA1N-Channel 30 V 12A (Ta), 44A (Tc) 2.5W (Ta), 30W (Tc) Surface Mount PG-TDSON-8-5
1:$0.6500
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ABRmicro #.ABR2045-BSC100-994642
ManufacturerInfineon Technologies
MPN #.BSC100N03MSGATMA1
Estimated Lead Time-
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Datasheet
BSC100N03MS G(PDF)
BSC100N03MS G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.6500
Ext. Price$ 0.6500
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.6500$0.6500
10$0.5610$5.6100
100$0.3890$38.8880
500$0.3240$162.0310
1000$0.2760$276.2500
2000$0.2470$493.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusEnd of Life (EOL)
Base Product NumberBSC100
Continuous Drain Current (ID) @ 25°C12A (Ta), 44A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance10mOhm @ 30A, 10V
Package Type (Mfr.)PG-TDSON-8-5
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC100N03MSGATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed to handle a drain-source voltage of up to 30V and can conduct a continuous current of 12A when measured in ambient conditions (Ta) and 44A when measured under specified conditions (Tc). The power dissipation of this surface-mounted device is rated at 2.5W in ambient conditions and 30W when measured under specified conditions. Encased in a PG-TDSON-8-5 package, this part exhibits a low on-resistance of 10mOhm when conducting 30A at 10V, and it is operational with gate-source voltages of 4.5V and 10V, with a threshold of 2V at 250µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.