BSC0902NSATMA1N-Channel 30 V 24A (Ta), 100A (Tc) 2.5W (Ta), 48W (Tc) Surface Mount PG-TDSON-8-6
1:$0.9400
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ABRmicro #.ABR2045-BSC090-997767
ManufacturerInfineon Technologies
MPN #.BSC0902NSATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSC0902NS(PDF)
BSC0902NS(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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Unit Price$ 0.9400
Ext. Price$ 0.9400
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9400$0.9400
10$0.7690$7.6930
100$0.5980$59.8190
500$0.5080$253.9380
1000$0.4120$412.2500
2000$0.3890$777.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC0902
Continuous Drain Current (ID) @ 25°C24A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)26 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 48W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 30A, 10V
Package Type (Mfr.)PG-TDSON-8-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC0902NSATMA1 is a robust N-Channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency power management. It operates at a maximum voltage of 30 volts and can handle current levels up to 24A in ambient temperature conditions (Ta) and up to 100A in controlled environments (Tc). The device showcases a low on-state resistance of 2.6 milliohms at 30A and 10V, ensuring minimal power losses. With a gate charge of 26 nC at 10V, it supports rapid switching capabilities. The MOSFET is encased in a surface-mount PG-TDSON-8-6 package, allowing for enhanced thermal performance with a power dissipation of 2.5W in ambient conditions and 48W when mounted appropriately.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.