BSC060N10NS3GATMA1N-Channel 100 V 14.9A (Ta), 90A (Tc) 125W (Tc) Surface Mount PG-TDSON-8-1
1:$2.1110
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC060-994593
ManufacturerInfineon Technologies
MPN #.BSC060N10NS3GATMA1
Estimated Lead Time18 Weeks
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Datasheet
BSC060N10NS3 G(PDF)
BSC060N10NS3 G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.1110
Ext. Price$ 2.1110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.1110$2.1110
10$1.7570$17.5740
100$1.3980$139.8250
500$1.1840$591.8130
1000$1.0040$1004.0630
2000$0.9540$1908.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC060
Continuous Drain Current (ID) @ 25°C14.9A (Ta), 90A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4900 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 90µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC060N10NS3GATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It supports a maximum drain-source voltage of 100 volts and can handle a continuous current of 14.9 amps at 25°C ambient temperature or 90 amps when measured at the component case. The device is capable of dissipating up to 125 watts when mounted on a printed circuit board. It features a gate-source voltage rating of ±20 volts and operates efficiently with threshold voltages of 6V and 10V. The total gate charge is specified at 68 nC when driven at 10 volts. The component is designed for surface mount technology and is encapsulated in a PG-TDSON-8-1 package.
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