BSC052N03LSATMA1N-Channel 30 V 17A (Ta), 57A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount PG-TDSON-8-6
1:$0.5300
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ABRmicro #.ABR2045-BSC052-977465
ManufacturerInfineon Technologies
MPN #.BSC052N03LSATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSC052N03LS(PDF)
BSC052N03LS(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5300
Ext. Price$ 0.5300
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5300$0.5300
10$0.4300$4.3030
100$0.3350$33.4690
500$0.2840$141.8440
1000$0.2810$280.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC052
Continuous Drain Current (ID) @ 25°C17A (Ta), 57A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)770 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 28W (Tc)
RDS(on) Drain-to-Source On Resistance5.2mOhm @ 30A, 10V
Package Type (Mfr.)PG-TDSON-8-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC052N03LSATMA1 is an N-Channel MOSFET produced by Infineon Technologies, designed for efficient power management solutions. This component can handle a maximum continuous current of 17A at a standard ambient temperature and up to 57A when mounted on a suitable heat-dissipating surface. It features a maximum power dissipation of 2.5W at ambient and 28W when adequately cooled. This surface-mount device comes in a compact PG-TDSON-8-6 package, making it suitable for space-constrained environments. The MOSFET operates at gate-source voltages of 4.5V and 10V, with a gate charge of 12 nC typically measured at 10V, and can withstand a maximum gate-source voltage of ±20V. Its design allows for effective thermal management and reliable performance in various electronic systems.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.