BSC042NE7NS3GATMA1N-Channel 75 V 19A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1
1:$2.5310
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ABRmicro #.ABR2045-BSC042-1016068
ManufacturerInfineon Technologies
MPN #.BSC042NE7NS3GATMA1
Estimated Lead Time18 Weeks
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Datasheet
BSC042NE7NS3 G(PDF)
BSC042NE7NS3 G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.5310
Ext. Price$ 2.5310
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.5310$2.5310
10$2.1020$21.0160
100$1.6730$167.3440
500$1.4160$708.1560
1000$1.2010$1200.6250
2000$1.1410$2282.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC042
Continuous Drain Current (ID) @ 25°C19A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)75 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)69 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4800 pF @ 37.5 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 125W (Tc)
RDS(on) Drain-to-Source On Resistance4.2mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 91µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC042NE7NS3GATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power switching in a compact surface mount PG-TDSON-8-1 package. It is capable of handling a drain-source voltage (Vds) of up to 75 V. At a case temperature (Tc), the device supports a continuous drain current of up to 100A and can dissipate power up to 125W, whereas, at an ambient temperature (Ta), it can manage a current of 19A and dissipate 2.5W. The part has a gate threshold voltage of 3.8V at a gate current of 91µA and features an input capacitance of 4800 pF at 37.5 V, making it suitable for high-efficiency performance in various electronic circuit designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.