BSC037N08NS5ATMA1N-Channel 80 V 100A (Tc) 2.5W (Ta), 114W (Tc) Surface Mount PG-TDSON-8-7
1:$2.0860
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ABRmicro #.ABR2045-BSC037-987898
ManufacturerInfineon Technologies
MPN #.BSC037N08NS5ATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSC037N08NS5(PDF)
BSC037N08NS5(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.0860
Ext. Price$ 2.0860
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.0860$2.0860
10$1.7360$17.3610
100$1.3810$138.1250
500$1.1690$584.3750
1000$0.9920$992.3750
2000$0.9410$1882.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC037
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)58 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4200 pF @ 40 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 114W (Tc)
RDS(on) Drain-to-Source On Resistance3.7mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-7
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 72µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC037N08NS5ATMA1 is an N-Channel MOSFET designed by Infineon Technologies, offering robust electrical performance in a compact, surface-mount PG-TDSON-8-7 package. It is rated for operation at 80 volts and can handle currents up to 100 amps under specified conditions. With a power dissipation capability of 2.5 watts when mounted on a thermally unenhanced surface and up to 114 watts when adequately cooled, this MOSFET is suitable for a range of demanding environments. The component features an input capacitance of 4,200 pF at a voltage of 40 V and is suitable for gate-source voltages of 6V or 10V, making it versatile for various electrical configurations.
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