BSC035N04LSGATMA1N-Channel 40 V 21A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
1:$1.0000
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC035-939138
ManufacturerInfineon Technologies
MPN #.BSC035N04LSGATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSC035N04LS G(PDF)
BSC035N04LS G(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.0000
Ext. Price$ 1.0000
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0000$1.0000
10$0.8210$8.2130
100$0.6400$63.9630
500$0.5420$270.9380
1000$0.4420$442.0000
2000$0.4150$830.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC035
Continuous Drain Current (ID) @ 25°C21A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)64 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5100 pF @ 20 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 69W (Tc)
RDS(on) Drain-to-Source On Resistance3.5mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 36µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC035N04LSGATMA1 is a semiconductor component manufactured by Infineon Technologies featuring an N-Channel MOSFET design. It is designed to handle voltages up to 40V and current ratings of 21A under ambient conditions and 100A with appropriate thermal management. The part is capable of dissipating 2.5W of power in free air (Ta) and up to 69W when mounted and properly cooled (Tc). Housed in a compact PG-TDSON-8-1 surface mount package, it demonstrates a low on-state resistance of 3.5 milliohms when conducting 50A at a gate voltage of 10V. Additionally, it has a total gate charge of 64 nanocoulombs at a 10V gate-source voltage, indicating its switching efficiency.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.