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BSC030N04NSGATMA1N-Channel 40 V 23A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1

1:$0.9830

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC030-919770
MPN #.BSC030N04NSGATMA1
Estimated Lead Time20 Weeks
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In Stock: 31083
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.9830
Ext. Price$ 0.9830
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.9830$0.9830
10$0.8020$8.0220
100$0.6250$62.4750
500$0.5290$264.5630
1000$0.4310$431.3750
2000$0.4050$809.6250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC030
Continuous Drain Current (ID) @ 25°C23A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)61 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4900 pF @ 20 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 83W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 49µA
Package / Case8-PowerTDFN
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC030N04NSGATMA1 is a surface mount N-Channel MOSFET manufactured by Infineon Technologies, designed to handle a maximum voltage of 40V. It offers a continuous drain current of 23A at ambient temperature (Ta) and up to 100A when mounted on a suitable thermal pad (Tc). The component can dissipate power up to 2.5W at ambient temperature and 83W with effective thermal management. Encased in a compact PG-TDSON-8-1 package, this device features a gate charge of 61 nC at 10V and a gate threshold voltage of 4V at 49µA, making it suitable for efficient switching operations in various electronic circuits.
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