BSC030N03LSGATMA1N-Channel 30 V 23A (Ta), 100A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-1
1:$0.8130
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC030-995413
ManufacturerInfineon Technologies
MPN #.BSC030N03LSGATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSC030N03LS G(PDF)
BSC030N03LS G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.8130
Ext. Price$ 0.8130
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.8130$0.8130
10$0.6640$6.6410
100$0.5160$51.6380
500$0.4370$218.3440
1000$0.3560$355.9380
2000$0.3360$671.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC030
Continuous Drain Current (ID) @ 25°C23A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4300 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 69W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 30A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC030N03LSGATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for 30 V operation and can handle a current of 23A in free air (Ta) and up to 100A with adequate cooling (Tc). It is capable of dissipating power up to 2.5W in free air and 69W with proper thermal management. The MOSFET supports a gate-source voltage range of ±20V and operates efficiently with gate voltages of 4.5V and 10V. It features a low on-resistance of 3mOhm when conducting 30A with a 10V gate-source voltage, which helps improve efficiency. The component is a surface-mount device housed in a PG-TDSON-8-1 package, making it suitable for compact designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.