BSC026N08NS5ATMA1N-Channel 80 V 23A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-6
1:$2.6840
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ABRmicro #.ABR2045-BSC026-1009071
ManufacturerInfineon Technologies
MPN #.BSC026N08NS5ATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSC026N08NS5(PDF)
BSC026N08NS5(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.6840
Ext. Price$ 2.6840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.6840$2.6840
10$2.2550$22.5460
100$1.8230$182.3250
500$1.6210$810.6880
1000$1.3880$1387.6250
2000$1.3070$2613.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSC026
Continuous Drain Current (ID) @ 25°C23A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)80 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)92 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6800 pF @ 40 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 156W (Tc)
RDS(on) Drain-to-Source On Resistance2.6mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-6
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.8V @ 115µA
Package / Case8-PowerTDFN
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Datasheets
Environmental Information
PCN Assembly/Origin
PCN Design/Specification
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC026N08NS5ATMA1 is an N-Channel MOSFET from Infineon Technologies designed for efficient power management. It operates at a maximum voltage of 80V and can handle currents up to 23A in free air conditions (Ta) and up to 100A when mounted on an adequately cooled surface (Tc). The component features power dissipation ratings of 2.5W for free air and 156W when properly cooled. It is encapsulated in a PG-TDSON-8-6 surface-mount package, offering compactness and ease of integration into electronic assemblies. With a gate threshold voltage range of 6V to 10V, a gate charge of 92 nC at 10V, and an input capacitance of 6800 pF at 40V, this MOSFET provides a reliable option for switching applications where thermal management and efficiency are critical.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.