BSC017N04NSGATMA1N-Channel 40 V 30A (Ta), 100A (Tc) 2.5W (Ta), 139W (Tc) Surface Mount PG-TDSON-8-1
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ABRmicro #.ABR2045-BSC017-963155
ManufacturerInfineon Technologies
MPN #.BSC017N04NSGATMA1
Estimated Lead Time-
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Datasheet
BSC017N04NS G(PDF)
BSC017N04NS G(PDF)
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Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C30A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)108 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8800 pF @ 20 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 139W (Tc)
RDS(on) Drain-to-Source On Resistance1.7mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 85µA
Package / Case8-PowerTDFN
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Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC017N04NSGATMA1 from Infineon Technologies is an N-Channel MOSFET designed for surface mount applications, housed in a PG-TDSON-8-1 package. With a voltage rating of 40 V, it can handle currents up to 30A in free air (Ta) and 100A when properly mounted on a heatsink (Tc). It features an on-state resistance of 1.7mOhm at 50A and 10V gate voltage, indicating low conduction losses. The MOSFET also exhibits a threshold voltage of 4V at 85µA, and a gate charge capacitance of 8800 pF at 20 V, contributing to its efficiency in switching applications. It dissipates power up to 2.5W in free air and 139W with a heatsink, making it suitable for high-power operations.
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