BSC016N03LSGATMA1N-Channel 30 V 32A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1
1:$1.4200
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSC016-1013942
ManufacturerInfineon Technologies
MPN #.BSC016N03LSGATMA1
Estimated Lead Time-
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Datasheet
BSC016N03LS G(PDF)
BSC016N03LS G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4200
Ext. Price$ 1.4200
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4200$1.4200
10$1.1780$11.7830
100$0.9380$93.8190
500$0.7940$396.8440
1000$0.6730$672.5630
2000$0.6400$1279.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusEnd of Life (EOL)
Base Product NumberBSC016
Continuous Drain Current (ID) @ 25°C32A (Ta), 100A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)131 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10000 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 125W (Tc)
RDS(on) Drain-to-Source On Resistance1.6mOhm @ 30A, 10V
Package Type (Mfr.)PG-TDSON-8-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / Case8-PowerTDFN
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Datasheets
PCN Other
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSC016N03LSGATMA1 by Infineon Technologies is an N-Channel MOSFET designed for high-performance applications. It features a maximum drain-source voltage of 30 V and can handle continuous currents of 32A at ambient temperature (Ta) and up to 100A with optimal cooling conditions (Tc). The power dissipation is rated at 2.5W for ambient operation and 125W for case temperature, indicative of its robust thermal performance. This MOSFET, housed in a surface mount PG-TDSON-8-1 package, has a total gate charge of 131 nC at a gate-source voltage of 10 V, and its threshold voltage extends to 2.2V at 250µA. Its design supports operation with gate-source voltages of 4.5V and 10V, catering to versatile circuit requirements.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.