BSB028N06NN3GXUMA1N-Channel 60 V 22A (Ta), 90A (Tc) 2.2W (Ta), 78W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
1:$2.4190
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSB028-1035739
ManufacturerInfineon Technologies
MPN #.BSB028N06NN3GXUMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
BSB028N06NN3 G(PDF)
BSB028N06NN3 G(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 9970
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 2.4190
Ext. Price$ 2.4190
Add To Cart
Send Target Price
* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.4190$2.4190
10$2.0070$20.0710
100$1.5970$159.6940
500$1.3520$675.7500
1000$1.1460$1146.4380
2000$1.0890$2178.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberBSB028
Continuous Drain Current (ID) @ 25°C22A (Ta), 90A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)143 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)12000 pF @ 30 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.2W (Ta), 78W (Tc)
RDS(on) Drain-to-Source On Resistance2.8mOhm @ 30A, 10V
Package Type (Mfr.)MG-WDSON-2, CanPAK M™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 102µA
Package / Case3-WDSON
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies BSB028N06NN3GXUMA1 is a surface mount N-channel MOSFET designed for use in demanding electrical environments. It operates with a maximum voltage of 60 V and accommodates current ratings of up to 22A in ambient conditions (Ta) and 90A under case-optimized conditions (Tc). This component is housed in a compact MG-WDSON-2, CanPAK M™ package, ensuring efficient space utilization on printed circuit boards. The device features a low on-resistance of 2.8 mOhm at 30A and 10V, which contributes to reduced conduction losses. Additionally, it has a total gate charge of 143 nC at 10 V and exhibits a threshold voltage of 4V at 102 µA. These specifications highlight its suitability for high-efficiency power management applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.