BSB012NE2LXIXUMA1N-Channel 25 V 170A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-BSB012-989477
ManufacturerInfineon Technologies
MPN #.BSB012NE2LXIXUMA1
Estimated Lead Time-
SampleGet Free Sample
Datasheet
BSB012NE2LXI(PDF)
BSB012NE2LXI(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 8
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
IPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberBSB012
Continuous Drain Current (ID) @ 25°C170A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)82 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5852 pF @ 12 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 57W (Tc)
RDS(on) Drain-to-Source On Resistance1.2mOhm @ 30A, 10V
Package Type (Mfr.)MG-WDSON-2, CanPAK M™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case3-WDSON
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSB012NE2LXIXUMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. This component is designed for use in surface mount applications, featuring a maximum voltage rating of 25 V and a current carrying capability of 170 A under controlled conditions (Tc). It has a power dissipation of 2.8W at standard ambient conditions (Ta) and 57W when mounted on a suitable heat sink (Tc). The device is encapsulated in a compact MG-WDSON-2, CanPAK M™ package, which aids in efficient space utilization. With a gate charge of 82 nC when driven at 10 V and a gate threshold voltage at 2V for a bus of 250µA, this MOSFET offers efficient performance for a range of electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.