The Infineon Technologies part BSB012N03LX3 G is an N-channel MOSFET designed for use in various electrical circuits. It features a drain-source voltage rating of 30 V and a continuous drain current capability of up to 39A when mounted on a board (Ta), while the chip can handle up to 180A (Tc). The device dissipates power with a capacity of 2.8W in ambient temperature scenarios (Ta) and up to 89W when the silicon is maintained at a constant temperature (Tc). Packaged in a compact MG-WDSON-2, CanPAK M™ surface-mount format, it is suitable for space-constrained designs. The gate charge is measured at 169 nC at 10 V, and it has a gate threshold voltage of 2.2V with a gate current of 250µA.