BSB008NE2LXXUMA1N-Channel 25 V 46A (Ta), 180A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount MG-WDSON-2, CanPAK M™
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ABRmicro #.ABR2045-BSB008-1018429
ManufacturerInfineon Technologies
MPN #.BSB008NE2LXXUMA1
Estimated Lead Time-
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Datasheet
BSB008NE2LX(PDF)
BSB008NE2LX(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberBSB008
Continuous Drain Current (ID) @ 25°C46A (Ta), 180A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)343 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)16000 pF @ 12 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation2.8W (Ta), 89W (Tc)
RDS(on) Drain-to-Source On Resistance0.8mOhm @ 30A, 10V
Package Type (Mfr.)MG-WDSON-2, CanPAK M™
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 250µA
Package / Case3-WDSON
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Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The BSB008NE2LXXUMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power regulation with a maximum voltage rating of 25 V and current handling capabilities of 46A at ambient temperature (Ta) and 180A when housed in a case (Tc). It supports a power dissipation of 2.8W at Ta and up to 89W at Tc, making it suitable for high-current applications. The part features a compact surface mount design in a MG-WDSON-2, CanPAK M™ package, optimizing space without compromising performance. Additional electrical characteristics include a gate-to-source tolerance of ±20V and a capacitance of 16000 pF at 12 V, with a threshold voltage of 2V at 250µA.
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