AUIRFZ48ZSN-Channel 55 V 61A (Tc) 91W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-AUIRFZ-929578
ManufacturerInfineon Technologies
MPN #.AUIRFZ48ZS
Estimated Lead Time-
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Datasheet
AUIRFZ48Z(S)(PDF)
AUIRFZ48Z(S)(PDF)
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Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C61A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)64 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1720 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation91W (Tc)
RDS(on) Drain-to-Source On Resistance11mOhm @ 37A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRFZ48ZS is an N-channel MOSFET manufactured by Infineon Technologies, designed for power management applications. It supports a maximum drain-source voltage of 55V and a continuous drain current of 61A under certain conditions (Tc). Housed in a D2PAK surface mount package, this MOSFET offers a power dissipation of 91W (Tc). It operates with a gate-source threshold voltage rated at 10V and features an input capacitance of 1720 pF when measured at 25 V. The device also allows for a gate-source voltage range of up to ±20V, making it suitable for various robust switching and amplification tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.