AUIRFSL4310N-Channel 100 V 75A (Tc) 300W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-AUIRFS-993962
ManufacturerInfineon Technologies
MPN #.AUIRFSL4310
Estimated Lead Time-
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Datasheet
AUIRFS(L)4310(PDF)
AUIRFS(L)4310(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)100 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)250 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7670 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 75A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRFSL4310 from Infineon Technologies is a robust N-Channel MOSFET designed for high power applications. Encased in a Through Hole TO-262 package, this MOSFET can handle a maximum drain-source voltage of 100 V and supports a continuous current of up to 75 A at a case temperature (Tc) limit, with a power dissipation capability of 300 W at the same condition. It exhibits a low on-resistance of 7 milliohms when driving 75 A at a gate-source voltage of 10 V, which minimizes power losses. The device has an input capacitance of 7670 pF measured at 50 V and a gate threshold voltage of 4 V at 250 µA, indicating its suitability for efficient switching operations.
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