AUIRFSL4115N-Channel 150 V 99A (Tc) 375W (Tc) Through Hole TO-262
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ABRmicro #.ABR2045-AUIRFS-1021113
ManufacturerInfineon Technologies
MPN #.AUIRFSL4115
Estimated Lead Time-
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Datasheet
AUIRFS(L)4115(PDF)
AUIRFS(L)4115(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C99A (Tc)
Drain-to-Source Voltage (VDS)150 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)120 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5270 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation375W (Tc)
RDS(on) Drain-to-Source On Resistance12.1mOhm @ 62A, 10V
Package Type (Mfr.)TO-262
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 250µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRFSL4115 is a power MOSFET manufactured by Infineon Technologies, characterized by its N-Channel configuration and a maximum voltage rating of 150 V. It is capable of handling a continuous current of up to 99A and delivering a power dissipation of 375W when adequately heat-sinked. Packaged in a TO-262 through-hole form factor, this component features a low gate charge of 120 nC at 10 V and an on-resistance of 12.1 mOhm at 62A, 10V, offering both efficient switching performance and thermal handling. The device's gate threshold voltage is specified at 5V, allowing operation with minimal power loss.
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