AUIRFS4010-7TRLN-Channel 100 V 190A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
1:$3.5130
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ABRmicro #.ABR2045-AUIRFS-1009122
ManufacturerInfineon Technologies
MPN #.AUIRFS4010-7TRL
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
AUIRFS4010-7P(PDF)
AUIRFS4010-7P(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 3.5130
Ext. Price$ 3.5130
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
800$3.5130$2810.1000
1600$3.1610$5057.5000
2400$2.9620$7109.4000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C190A (Tc)
Drain-to-Source Voltage (VDS)100 V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)230 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9830 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation380W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 110A, 10V
Package Type (Mfr.)D2PAK (7-Lead)
TechnologyMOSFET (Metal Oxide)
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRFS4010-7TRL by Infineon Technologies is an N-Channel power MOSFET designed for high-efficiency performance with a maximum voltage rating of 100 V and a continuous current capacity of 190A at a case temperature (Tc). It offers a substantial power dissipation capability of 380W, making it suitable for demanding environments. This MOSFET features a low on-resistance of 4mOhm at 110A and 10V, indicative of its efficiency in minimizing power loss. The device also presents a total gate charge of 230 nC at 10 V and an input capacitance of 9830 pF at 50 V, which emphasize its efficiency in switching applications. The MOSFET is housed in a surface-mountable D2PAK (7-Lead) package, facilitating ease of integration in various electronic assemblies.
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