AUIRFS3206N-Channel 60 V 120A (Tc) 300W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-AUIRFS-979548
ManufacturerInfineon Technologies
MPN #.AUIRFS3206
Estimated Lead Time-
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Datasheet
AUIRFS(L)3206(PDF)
AUIRFS(L)3206(PDF)
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Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6540 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 75A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRFS3206 is an N-channel power MOSFET manufactured by Infineon Technologies. It is designed for surface mount configurations and comes in a D2PAK package. This MOSFET can handle a maximum drain-source voltage of 60V and supports a continuous drain current of up to 120A at a case temperature (Tc). It also provides a maximum power dissipation of 300W at Tc. The gate-source threshold voltage is rated at 4V with a 150µA current, and it requires a gate-source voltage of 10V for optimal operation. Additionally, the gate charge is characterized by an input capacitance of 6540 pF at 50V.
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