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AUIRFR5505TRLP-Channel 55 V 18A (Tc) 57W (Tc) Surface Mount TO-252AA (DPAK)

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ABRmicro #.ABR2045-AUIRFR-944763
MPN #.AUIRFR5505TRL
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In Stock: 9
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Continuous Drain Current (ID) @ 25°C18A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)650 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation57W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 9.6A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRFR5505TRL is a P-channel MOSFET manufactured by Infineon Technologies. It is designed for surface mount applications and comes in a TO-252AA (DPAK) package. The component can handle a maximum voltage of 55 V and a continuous current of 18A at the case temperature (Tc). It has a power dissipation capacity of 57W at Tc. The gate charge is specified at 32 nC with a gate voltage of 10 V, and the device exhibits a maximum on-resistance of 110 mOhm at a current of 9.6A and a gate voltage of 10V. Additionally, it features an input capacitance of 650 pF at 25 V, making it suitable for high-efficiency power management systems.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.