AUIRFR4620N-Channel 200 V 24A (Tc) 144W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-AUIRFR-978972
ManufacturerInfineon Technologies
MPN #.AUIRFR4620
Estimated Lead Time-
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Datasheet
AUIRFR4620(PDF)
AUIRFR4620(PDF)
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Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberAUIRFR4620
Continuous Drain Current (ID) @ 25°C24A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)38 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1710 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation144W (Tc)
RDS(on) Drain-to-Source On Resistance78mOhm @ 15A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 100µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRFR4620 is an N-Channel MOSFET manufactured by Infineon Technologies, featuring a 200 V drain-source breakdown voltage and a current capacity of 24A at a case temperature (Tc). It provides a power dissipation of 144W under similar conditions. Designed for surface mount applications, this MOSFET comes in a TO-252AA (DPAK) package. It is characterized by a gate threshold voltage range of ±20V and operates with a gate-source voltage of 5V at 100µA. Additionally, it possesses an input capacitance of 1710 pF at 50 V, suggesting effective switching capabilities for various electronic configurations.
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