AUIRF7736M2TRN-Channel 40 V 22A (Ta), 108A (Tc) 2.5W (Ta), 63W (Tc) Surface Mount DirectFET™ Isometric M4
1:$3.0020
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-AUIRF7-930687
ManufacturerInfineon Technologies
MPN #.AUIRF7736M2TR
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
AUIRF7736M2TR(1)(PDF)
AUIRF7736M2TR(1)(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 3.0020
Ext. Price$ 3.0020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$3.0020$3.0020
10$2.5170$25.1710
100$2.0360$203.5750
500$1.8110$905.2500
1000$1.5500$1550.1880
2000$1.4600$2919.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberAUIRF7736
Continuous Drain Current (ID) @ 25°C22A (Ta), 108A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)108 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4267 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.5W (Ta), 63W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 65A, 10V
Package Type (Mfr.)DirectFET™ Isometric M4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseDirectFET™ Isometric M4
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Datasheets
Environmental Information
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRF7736M2TR is an N-Channel MOSFET from Infineon Technologies, characterized by its 40 V voltage rating and capable of handling currents up to 22A in a Ta environment and 108A in a Tc environment. It exhibits a power dissipation capacity of 2.5W in a Ta setting and 63W in a Tc setting. The device is designed for surface mount installation, featuring a DirectFET™ Isometric M4 package. It operates with a gate-source threshold voltage of 4V at 150µA and can withstand gate-source voltage swings up to ±20V. Additionally, it has an input capacitance of 4267 pF at 25 V, which affects its switching characteristics.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.