AUIRF7648M2TRN-Channel 60 V 14A (Ta), 68A (Tc) 2.5W (Ta), 63W (Tc) Surface Mount DirectFET™ Isometric M4
1:$2.9840
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ABRmicro #.ABR2045-AUIRF7-996048
ManufacturerInfineon Technologies
MPN #.AUIRF7648M2TR
Estimated Lead Time-
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Datasheet
AUIRF7648M2TR(1)(PDF)
AUIRF7648M2TR(1)(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.9840
Ext. Price$ 2.9840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.9840$2.9840
10$2.5060$25.0640
100$2.0270$202.7250
500$1.8030$901.5310
1000$1.5430$1542.7500
2000$1.4540$2907.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberAUIRF7648
Continuous Drain Current (ID) @ 25°C14A (Ta), 68A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)53 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2170 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.5W (Ta), 63W (Tc)
RDS(on) Drain-to-Source On Resistance7mOhm @ 41A, 10V
Package Type (Mfr.)DirectFET™ Isometric M4
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.9V @ 150µA
Package / CaseDirectFET™ Isometric M4
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRF7648M2TR is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management and switching applications. It is characterized by a maximum voltage rating of 60V and current handling capabilities of 14A when operating at ambient temperature (Ta) and up to 68A with an appropriate heat sink (Tc). The device features a low on-state resistance of 7mOhm at 41A and 10V, ensuring minimal energy loss during operation. Housed in a compact, surface-mount DirectFET™ Isometric M4 package, this MOSFET supports a power dissipation of 2.5W at ambient temperature and 63W with suitable thermal management, while accommodating a maximum gate-source voltage of ±20V.
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