AUIRF7640S2TRN-Channel 60 V 5.8A (Ta), 21A (Tc) 2.4W (Ta), 30W (Tc) Surface Mount DIRECTFET SB
1:$1.4280
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-AUIRF7-927537
ManufacturerInfineon Technologies
MPN #.AUIRF7640S2TR
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
AUIRF7640S2TR(1)(PDF)
AUIRF7640S2TR(1)(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.4280
Ext. Price$ 1.4280
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4280$1.4280
10$1.1630$11.6340
100$0.9050$90.5250
500$0.7680$384.0940
1000$0.6260$625.8130
2000$0.5890$1177.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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SeriesHEXFET®
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberAUIRF7640
Continuous Drain Current (ID) @ 25°C5.8A (Ta), 21A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)450 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation2.4W (Ta), 30W (Tc)
RDS(on) Drain-to-Source On Resistance36mOhm @ 13A, 10V
Package Type (Mfr.)DIRECTFET SB
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)5V @ 25µA
Package / CaseDirectFET™ Isometric SB
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Datasheets
Environmental Information
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRF7640S2TR by Infineon Technologies is an N-Channel MOSFET designed for surface mount applications, featuring a compact DIRECTFET SB package. It operates at a voltage of 60V, with a current handling capacity of 5.8A when used in free air (Ta) and up to 21A when utilized with a suitable heat sink (Tc). The power dissipation is rated at 2.4W in free air (Ta) and 30W with a heat sink (Tc). This component exhibits a low on-state resistance of 36 milliohms at 13A and 10V, ensuring efficient performance. Additionally, it possesses an input capacitance of 450 pF at 25V, aiding in faster switching speeds.
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