AUIRF7416QTRP-Channel 30 V 10A (Ta) 2.5W (Ta) Surface Mount 8-SO
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ABRmicro #.ABR2045-AUIRF7-1011796
ManufacturerInfineon Technologies
MPN #.AUIRF7416QTR
Estimated Lead Time-
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Datasheet
AUIRF7416Q(PDF)
AUIRF7416Q(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C10A (Ta)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)92 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation2.5W (Ta)
RDS(on) Drain-to-Source On Resistance20mOhm @ 5.6A, 10V
Package Type (Mfr.)8-SO
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.04V @ 250µA
Package / Case8-SOIC (0.154", 3.90mm Width)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRF7416QTR is a P-Channel MOSFET manufactured by Infineon Technologies. It is designed for surface mount applications and comes in an 8-SO package. This MOSFET can handle a maximum continuous drain current of 10A at a drain-source voltage of 30V and has a power dissipation of 2.5W when measured at ambient temperature. It features a low on-state resistance of 20 milliohms at 5.6A and 10V gate drive, and has a total gate charge of 92 nanocoulombs at 10V, making it suitable for efficient switching applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.