AUIRF4104SN-Channel 40 V 75A (Tc) 140W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-AUIRF4-962846
ManufacturerInfineon Technologies
MPN #.AUIRF4104S
Estimated Lead Time-
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Datasheet
AUIRF4104(S)(PDF)
AUIRF4104(S)(PDF)
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Tube
Shipping DateNovember 16, 2024
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SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)100 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3000 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation140W (Tc)
RDS(on) Drain-to-Source On Resistance5.5mOhm @ 75A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRF4104S by Infineon Technologies is an N-Channel MOSFET designed for power management applications. It features a maximum drain-source voltage (Vds) of 40V and can handle continuous drain current up to 75A when properly mounted, making it suitable for high-power applications. This surface-mount device comes in a D2PAK package and can dissipate up to 140W of power when adequately cooled. Additionally, it includes a gate-source voltage (Vgs) rating of ±20V and possesses an input capacitance of 3000 pF at 25V, providing efficient switching capabilities.
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