AUIRF3305N-Channel 55 V 140A (Tc) 330W (Tc) Through Hole TO-220
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ABRmicro #.ABR2045-AUIRF3-1029725
ManufacturerInfineon Technologies
MPN #.AUIRF3305
Estimated Lead Time-
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Datasheet
AUIRF3305(PDF)
AUIRF3305(PDF)
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Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberAUIRF3305
Continuous Drain Current (ID) @ 25°C140A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3650 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation330W (Tc)
RDS(on) Drain-to-Source On Resistance8mOhm @ 75A, 10V
Package Type (Mfr.)TO-220
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-220-3
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRF3305, manufactured by Infineon Technologies, is an N-channel MOSFET designed for high-power applications. It features a maximum voltage rating of 55 V and can handle a current of up to 140 A, when properly heat-sinked, thanks to its 330 W power dissipation capability. Housed in a TO-220 through-hole package, it offers a low on-resistance of 8 milliohms at 75 A with a gate voltage of 10 V, ensuring efficient performance. Additionally, it exhibits a gate threshold voltage of 4 V at 250 µA. This MOSFET's metal oxide construction supports robust electrical performance suitable for demanding environments.
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