AUIRF1404STRLN-Channel 40 V 75A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount D2PAK
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ABRmicro #.ABR2045-AUIRF1-1013819
ManufacturerInfineon Technologies
MPN #.AUIRF1404STRL
Estimated Lead Time-
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Datasheet
AUIRF1404S,L(PDF)
AUIRF1404S,L(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberAUIRF1404
Continuous Drain Current (ID) @ 25°C75A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)200 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7360 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3.8W (Ta), 200W (Tc)
RDS(on) Drain-to-Source On Resistance4mOhm @ 95A, 10V
Package Type (Mfr.)D2PAK
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
PCN Design/Specification
PCN Packaging
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The AUIRF1404STRL is a surface mount N-Channel MOSFET designed by Infineon Technologies, housed in a D2PAK package. It is characterized by a drain-source voltage rating of 40 volts and a continuous drain current of 75A at a case temperature (Tc). The MOSFET exhibits a low on-resistance of 4mOhm when operating at a drain current of 95A and a gate-source voltage of 10V. Power handling capabilities of the device reach up to 200W at Tc, while managing 4V gate threshold voltage when exposed to a 250µA current. This component is crafted for high efficiency with thermal limitations capped at 3.8W for ambient conditions (Ta).
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