94-4737N-Channel 30 V 33A (Tc) 57W (Tc) Surface Mount TO-252AA (DPAK)
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ABRmicro #.ABR2045-94-473-1008028
ManufacturerInfineon Technologies
MPN #.94-4737
Estimated Lead Time-
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Datasheet
IRFR/U3303(PDF)
IRFR/U3303(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesHEXFET®
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIRFR3303
Continuous Drain Current (ID) @ 25°C33A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)29 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)750 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation57W (Tc)
RDS(on) Drain-to-Source On Resistance31mOhm @ 18A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Design Resources
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies component with part number 94-4737 is an N-Channel MOSFET designed for use in power management applications. It supports a drain-source voltage of up to 30 volts and a continuous drain current of 33 amperes, assuming proper heat dissipation through the case. The component dissipates a power of 57 watts under such conditions. It features a low on-resistance of 31 milliohms at 18 amperes and a gate-source voltage of 10 volts, ensuring efficient current handling. The MOSFET comes in a surface-mount TO-252AA package, also known as DPAK, making it suitable for compact PCB designs. The device also shows tolerance to maximum gate-source voltages of ±20 volts and operates with a threshold voltage of 4 volts at 250 microamperes.
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