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UNR521600LPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 150 mW Surface Mount SMini3-G1

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ABRmicro #.ABR292-UNR521-909153
MPN #.UNR521600L
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In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateDecember 24, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberUNR5216
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 5mA, 10V
Frequency - Transition150 MHz
Mounting StyleSurface Mount
Power - Max150 mW
Resistor - Base (R1)4.7 kOhms
Package Type (Mfr.)SMini3-G1
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseSC-70, SOT-323
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Product Drawings
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
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Additional Details
The UNR521600L is a surface-mount pre-biased NPN bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components. It is designed to simplify circuit design by integrating the biasing resistors required for operation. The transistor features a maximum voltage rating of 50 V, a current handling capability of 100 mA, and operates with a frequency of up to 150 MHz. It has a power dissipation capacity of 150 mW and is housed in a compact SMini3-G1 package. The device exhibits a voltage drop of 250 mV at a collector current of 10 mA, has a collector cut-off current of 500 nA, and incorporates internal bias resistors with a resistance value of 4.7 kOhms.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.