DMG563020RPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini5-F3-B
1:$0.1020
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ABRmicro #.ABR2045-DMG563-903938
ManufacturerPanasonic Electronic Components
MPN #.DMG563020R
Estimated Lead Time-
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Datasheet
DMG56302(PDF)
DMG56302(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.1020
Ext. Price$ 0.1020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.1020$306.0000
6000$0.0990$592.8750
9000$0.0880$793.6880
30000$0.0870$2613.7500
75000$0.0820$6135.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberDMG56302
Collector Current (Iᴄ)@25°C100mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Frequency - Transition-
Mounting StyleSurface Mount
Power - Max150mW
Resistor - Base (R1)22kOhms
Resistor - Emitter Base (R2)22kOhms
Package Type (Mfr.)SMini5-F3-B
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50V
Package / Case6-SMD (5 Leads), Flat Leads
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Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The DMG563020R is a pre-biased bipolar transistor (BJT) manufactured by Panasonic Electronic Components, featuring one NPN and one PNP transistor in a dual configuration. It is designed for surface mount applications with its SMini5-F3-B package, providing a compact and efficient solution. The device operates at a maximum voltage of 50V and a current of 100mA, with a power dissipation capacity of 150mW. It exhibits a base-emitter saturation voltage of 250mV at 500µA and 10mA, a leakage current of 500nA, and incorporates a built-in base resistor of 22kOhms. This configuration allows for simplified circuit design by reducing the need for external components.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.