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DSC5A01S0LBipolar (BJT) Transistor NPN 40 V 50 mA 150MHz 150 mW Surface Mount SMini3-F2-B
1:$0.0560
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-DSC5A0-903912
ManufacturerPanasonic Electronic Components
MPN #.DSC5A01S0L
Estimated Lead Time-
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In Stock: 5
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.0560
Ext. Price$ 0.0560
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.0560$168.9380
6000$0.0540$325.1250
9000$0.0470$420.7500
30000$0.0460$1370.6250
75000$0.0380$2868.7500
150000$0.0370$5578.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor NPN 20 V 15 mA 650MHz 200 mW Surface Mount MINI3-G3-B Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberDSC5A01
Collector Current (Iᴄ)@25°C50 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce600 @ 2mA, 10V
Frequency - Transition150MHz
MfrPanasonic Electronic Components
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Power - Max150 mW
Package Type (Mfr.)SMini3-F2-B
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic200mV @ 1mA, 10mA
Collector-Emitter Breakdown Voltage (Max.)40 V
Package / CaseSC-85
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Other
PCN Part Status Change
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
Additional Details
The DSC5A01S0L is a surface-mount NPN bipolar junction transistor manufactured by Panasonic Electronic Components. It operates with a maximum collector-emitter voltage of 40 V and supports a continuous collector current of up to 50 mA. The device features a transition frequency of 150 MHz and a power dissipation of 150 mW. It comes in a compact SMini3-F2-B package designed for efficient use in space-constrained applications. Key performance parameters include a base-emitter saturation voltage of 200 mV at 1 mA, with a DC current gain of 600 at 2 mA, when operated at 10 V. The transistor also maintains a low collector cut-off current of 1 µA.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.