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DSC2G02D0LBipolar (BJT) Transistor NPN 20 V 15 mA 650MHz 200 mW Surface Mount MINI3-G3-B
1:$0.0340
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-DSC2G0-905537
ManufacturerPanasonic Electronic Components
MPN #.DSC2G02D0L
Estimated Lead Time-
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In Stock: 4
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.0340
Ext. Price$ 0.0340
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
6000$0.0340$204.0000
9000$0.0290$258.1880
30000$0.0280$828.7500
75000$0.0260$1912.5000
150000$0.0220$3346.8750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor NPN 40 V 50 mA 150MHz 150 mW Surface Mount SMini3-F2-B Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberDSC2G02
Collector Current (Iᴄ)@25°C15 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)-
DC Current Gain (hFE) (Min) @ Ic, Vce65 @ 1mA, 6V
Frequency - Transition650MHz
MfrPanasonic Electronic Components
Mounting StyleSurface Mount
Operating Temperature150°C (TJ)
Power - Max200 mW
Package Type (Mfr.)MINI3-G3-B
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic-
Collector-Emitter Breakdown Voltage (Max.)20 V
Package / CaseTO-236-3, SC-59, SOT-23-3
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Other
PCN Part Status Change
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0075 (With an operating frequency not less than 100 MHz; No import duty applies)
Additional Details
The DSC2G02D0L is a surface-mount NPN bipolar junction transistor (BJT) manufactured by Panasonic Electronic Components. It operates at a voltage of 20 V and a current of 15 mA, making it suitable for switching and amplification tasks in electronics. With a frequency capability of up to 650 MHz and a power dissipation of 200 mW, this transistor can handle high-frequency applications within its specified limits. It features a current gain of 65 when measured at 1 mA and 6 V. Encapsulated in a compact MINI3-G3-B package, it is designed to fit onto printed circuit boards efficiently while conserving space.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.