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DMG564H20RPre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 150mW Surface Mount SMini6-F3-B
1:$0.1020
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ABRmicro #.ABR2045-DMG564-905489
ManufacturerPanasonic Electronic Components
MPN #.DMG564H20R
Estimated Lead Time-
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.1020
Ext. Price$ 0.1020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
3000$0.1020$306.0000
6000$0.0990$592.8750
9000$0.0880$793.6880
30000$0.0870$2613.7500
75000$0.0820$6135.9380
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Bipolar (BJT) Transistor NPN 40 V 50 mA 150MHz 150 mW Surface Mount SMini3-F2-B Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberDMG564
Collector Current (Iᴄ)@25°C100mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V / 30 @ 5mA, 10V
Frequency - Transition-
Mounting StyleSurface Mount
Power - Max150mW
Resistor - Base (R1)4.7kOhms, 1kOhms
Resistor - Emitter Base (R2)47kOhms, 10kOhms
Package Type (Mfr.)SMini6-F3-B
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic250mV @ 500µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50V
Package / Case6-SMD, Flat Leads
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
PCN Other
PCN Part Status Change
Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The DMG564H20R is a surface mount, pre-biased dual bipolar transistor from Panasonic Electronic Components, featuring one NPN and one PNP transistor in a SMini6-F3-B package. It is designed to handle a maximum voltage of 50V and a continuous current of 100mA, with a power dissipation of 150mW. The device exhibits a typical collector-emitter saturation voltage of 250mV at 500µA and 10mA. It offers a DC current gain (hFE) of 80 at 5mA and 10V for the NPN transistor and 30 at 5mA and 10V for the PNP transistor. The DMG564H20R also has a low base current of 500nA, making it efficient for use in compact electronics.
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