2SC563200LRF Transistor NPN 8V 50mA 1.1GHz 150mW Surface Mount SMini3-G1
N/A
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ABRmicro #.ABR2045-2SC563-907381
ManufacturerPanasonic Electronic Components
MPN #.2SC563200L
Estimated Lead Time-
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Datasheet
2SC563200L Datasheet(PDF)
2SC563200L Datasheet(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product Number2SC5632
Collector Current (Iᴄ)@25°C50mA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 2mA, 4V
Frequency - Transition1.1GHz
Gain-
Mounting StyleSurface Mount
Noise Figure (dB Typ @ f)-
Operating Temperature150°C (TJ)
Power - Max150mW
Package Type (Mfr.)SMini3-G1
Transistor TypeNPN
Collector-Emitter Breakdown Voltage (Max.)8V
Package / CaseSC-70, SOT-323
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Datasheets
Product Drawings
Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The 2SC563200L by Panasonic Electronic Components is a surface mount NPN RF transistor designed for high-frequency applications. It operates at a maximum voltage of 8V and can handle a continuous current of 50mA, with a power dissipation of 150mW. The transistor supports frequencies up to 1.1GHz, making it suitable for radio frequency applications. It exhibits a gain of 100 at a collector current of 2mA and a voltage of 4V. Encased in a compact SMini3-G1 package, it is tailored for space-efficient designs.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.