DRA9123E0LPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 125 mW Surface Mount SSMini3-F3-B
1:$0.3510
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ABRmicro #.ABR2045-DRA912-903584
ManufacturerPanasonic Electronic Components
MPN #.DRA9123E0L
Estimated Lead Time-
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
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Unit Price$ 0.3510
Ext. Price$ 0.3510
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Technical Specifications
Series-
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolescence Review In Progress
Base Product NumberDRA9123
Collector Current (Iᴄ)@25°C100 mA
Collector Cut-off Current (Iᴄᴇs)(Max.)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 5mA, 10V
Mounting StyleSurface Mount
Power - Max125 mW
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)2.2 kOhms
Package Type (Mfr.)SSMini3-F3-B
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Collector-Emitter Breakdown Voltage (Max.)50 V
Package / CaseSC-89, SOT-490
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PCN Other
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Environmental & Export Classifications
RoHS ComplianceComplies with Directive 2011/65/EU
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.21.0095 (Other; No import duty applies)
Additional Details
The DRA9123E0L is a pre-biased PNP bipolar junction transistor (BJT) produced by Panasonic Electronic Components. This surface-mount device, encapsulated in an SSMini3-F3-B package, is designed to handle a maximum voltage of 50 V and a current of up to 100 mA while dissipating 125 mW of power. It features a low base-emitter voltage drop of 300mV at 500µA and 10mA, and includes integrated biasing resistors of 2.2 kOhms on both the base and emitter. The compact surface-mount design and integrated resistors make the DRA9123E0L a practical choice for compact electronic circuits requiring efficient switching operations.
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