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2SK3892N-Channel 200 V 22A (Tc) 2W (Ta), 40W (Tc) Through Hole TO-220D-A1

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ABRmicro #.ABR2045-2SK389-980578
MPN #.2SK3892
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DatasheetDatasheet2SK3892(PDF)
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In Stock: 11
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
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Shipping DateNovember 16, 2024
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Technical Specifications
Series-
Packaging
Bulk
Lifecycle StatusObsolete
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3177 pF @ 25 V
MfrPanasonic Electronic Components
Mounting StyleThrough Hole
Operating Temperature150°C (TJ)
Maximum Power Dissipation2W (Ta), 40W (Tc)
RDS(on) Drain-to-Source On Resistance62mOhm @ 11A, 10V
Package Type (Mfr.)TO-220D-A1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±30V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1mA
Package / CaseTO-220-3 Full Pack
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The 2SK3892 from Panasonic Electronic Components is an N-channel MOSFET designed for efficient power handling and high switching performance. It operates with a maximum drain-source voltage of 200V and a continuous drain current of up to 22A when properly cooled (Tc). The package is a TO-220D-A1 through-hole type, which allows for easy mounting and heat dissipation. It has a low gate charge of 4.5V at 1mA, enabling fast switching times, and features a low on-resistance of 62 milliohms at 11A and 10V. Additionally, its input capacitance is 3177 pF at 25V, which contributes to its overall switching characteristics. With a power dissipation capacity of 2W in open air (Ta) and up to 40W when mounted on a suitable heat sink (Tc), it is suitable for various electronic applications requiring reliable power management components.
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