GP2T040A120HN-Channel 1200 V 63A (Tc) 322W (Tc) Through Hole TO-247-4
1:$15.9770
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR278-GP2T04-2712212
ManufacturerSemiQ
MPN #.GP2T040A120H
Estimated Lead Time30 Weeks
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Datasheet
GP2T040A120H (PDF)
GP2T040A120H (PDF)
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Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 38
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateDecember 24, 2024
* Quantity
Unit Price$15.9770
Ext. Price$15.9770
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$15.9770$15.9770
30$12.9310$387.9190
120$12.1710$1460.5130
510$11.0300$5625.2040
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tube
Lifecycle StatusActive
Continuous Drain Current (ID) @ 25°C63A (Tc)
Drain-to-Source Voltage (VDS)1200 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))20V
FET Feature-
FET TypeN-Channel
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation322W (Tc)
RDS(on) Drain-to-Source On Resistance52mOhm @ 40A, 20V
Package Type (Mfr.)TO-247-4
TechnologySiCFET (Silicon Carbide)
Gate-to-Source Voltage (Vɢs)+25V, -10V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 10mA
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3192 pF @ 1000 V
Gate Charge Total (Qg)(Max.)118 nC @ 20 V
Package / CaseTO-247-4
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Datasheets
Environmental & Export Classifications
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
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