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GCMX005A120S7B1Mosfet Array 1200V (1.2kV) 348A (Tc) 1.042kW (Tc) Chassis Mount

1:$177.5840

Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR289-GCMX00-2893927
ManufacturerSemiQ
MPN #.GCMX005A120S7B1
Estimated Lead Time26 Weeks
SampleGet Free Sample
DatasheetDatasheetGCMX005A120S7B1 (PDF)
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In Stock: 12
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tray
Shipping DateDecember 24, 2024
* Quantity
Unit Price$177.5840
Ext. Price$177.5840
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$177.5840$177.5840
10$166.3250$1663.2480
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
Technical Specifications
Series-
Packaging
Tray
Lifecycle StatusActive
Configuration2 N-Channel (Half Bridge)
Drain-to-Source Voltage (VDS)1200V (1.2kV)
FET Feature-
Grade-
Mounting StyleChassis Mount
Operating Temperature-40°C ~ 175°C (TJ)
Qualification-
Package Type (Mfr.)-
TechnologySilicon Carbide (SiC)
Power - Max1.042kW (Tc)
Continuous Drain Current (ID) @ 25°C348A (Tc)
Gate Charge Total (Qg)(Max.)978nC @ 20V
RDS(on) Drain-to-Source On Resistance7mOhm @ 200A, 20V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)29300pF @ 800V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 80mA
Package / CaseModule
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
Extended Links
Datasheets
GCMX005A120S7B1
Environmental & Export Classifications
REACH RegulationREACH Details Provided Upon Request
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
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